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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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FDS6692A Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
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FDS6692A Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
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3 / 7 page  FDS6692A Rev. A1 www.fairchildsemi.com 3 Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 9.2mH, IAS = 7.2A, VDD = 30V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 3: RθJA is measured with 1.0 in2 copper on FR-4 board tON Turn-On Time VDD = 15V, ID = 9A VGS = 10V, RGS = 6.2Ω - - 60 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 32 - ns td(OFF) Turn-Off Delay Time - 33 - ns tf Fall Time - 13 - ns tOFF Turn-Off Time - - 69 ns VSD Source to Drain Diode Voltage ISD = 9A - - 1.25 V ISD = 2.1A - - 1.0 V trr Reverse Recovery Time ISD = 9A, dISD/dt=100A/µs- - 27 ns QRR Reverse Recovered Charge ISD = 9A, dISD/dt=100A/µs- - 17 nC |
Podobny numer części - FDS6692A |
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Podobny opis - FDS6692A |
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