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TPCA8004-H Arkusz danych(PDF) 1 Page - Toshiba Semiconductor

Numer części TPCA8004-H
Szczegółowy opis  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCA8004-H Arkusz danych(HTML) 1 Page - Toshiba Semiconductor

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TPCA8004-H
2003-8-7
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCA8004-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg =37 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 3.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| =80 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
40
Drain current
Pulsed (Note 1)
IDP
120
A
Drain power dissipation
(Tc=25℃)
PD
45
W
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
2.8
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.6
W
Single pulse avalanche energy
(Note 3)
EAS
208
mJ
Avalanche current
IAR
40
A
Repetitive avalanche energy
(Tc=25℃) (Note 4)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
0.5±0.1
1.27
0.4±0.1
0.595
0.05 M A
1
4
5
8
0.15±0.05
0.8±0.1
1.1±0.2
4.25±0.2
1
4
5
8
5.0±0.2
0.95±0.05
S
0.05 S
A
0.166±0.05
JEDEC
JEITA
TOSHIBA
Weight: 0.08 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4
1,2,3:SOURCE
4:GATE
5,6,7,8:DRAIN


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