TC58NVG1S8BFT00 datasheet(5/37 Pages) TOSHIBA

Numer części	TC58NVG1S8BFT00

Szczegółowy opis	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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TC58NVG1S3BFT00/TC58NVG1S8BFT00

2003-10-30A

5

AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS

(Ta

= 0 to 70℃, VCC = 2.7 V to 3.6 V)

SYMBOL

PARAMETER

MIN

MAX

UNIT

NOTES

tCLS

CLE Setup Time

0



ns

tCLH

CLE Hold Time

10



ns

tCS

CE Setup Time

0



ns

tCH

CE Hold Time

10



ns

tWP

Write Pulse Width

25



ns

tALS

ALE Setup Time

0



ns

tALH

ALE Hold Time

10



ns

tDS

Data Setup Time

20



ns

tDH

Data Hold Time

10



ns

tWC

Write Cycle Time

50



ns

tWH

WE High Hold Time

15



ns

tWW

WP High to WE Low

100



ns

tRR

Ready to RE Falling Edge

20



ns

tRW

Ready to WE Falling Edge

20



ns

tRP

Read Pulse Width

35



ns

tRC

Read Cycle Time

50



ns

tREA

RE Access Time



35

ns

tCEA

CE Access Time



45

ns

tCLEA

CLE Access Time



45

ns

tALEA

ALE Access Time



45

ns

tOH

Data Output Hold Time

10



ns

tRHZ

RE High to Output High Impedance



30

ns

tCHZ

CE High to Output High Impedance



20

ns

tREH

RE High Hold Time

15



ns

tIR

Output-High-impedance-to- RE Falling Edge

0



ns

tRHW

RE High to WE Low

30



ns

tWHC

WE High to CE Low

30



ns

tWHR

WE High to RE Low

30



ns

tR

Memory Cell Array to Starting Address



25

µs

tWB

WE High to Busy



200

ns

tRST

Device Reset Time (Ready/Read/Program/Erase)



6/6/10/500

µs

Podobny numer części - TC58NVG1S8BFT00

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