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TC58NVG1S8BFT00 Arkusz danych(PDF) 5 Page - Toshiba Semiconductor |
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TC58NVG1S8BFT00 Arkusz danych(HTML) 5 Page - Toshiba Semiconductor |
5 / 37 page TC58NVG1S3BFT00/TC58NVG1S8BFT00 2003-10-30A 5 AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (Ta = 0 to 70℃, VCC = 2.7 V to 3.6 V) SYMBOL PARAMETER MIN MAX UNIT NOTES tCLS CLE Setup Time 0 ns tCLH CLE Hold Time 10 ns tCS CE Setup Time 0 ns tCH CE Hold Time 10 ns tWP Write Pulse Width 25 ns tALS ALE Setup Time 0 ns tALH ALE Hold Time 10 ns tDS Data Setup Time 20 ns tDH Data Hold Time 10 ns tWC Write Cycle Time 50 ns tWH WE High Hold Time 15 ns tWW WP High to WE Low 100 ns tRR Ready to RE Falling Edge 20 ns tRW Ready to WE Falling Edge 20 ns tRP Read Pulse Width 35 ns tRC Read Cycle Time 50 ns tREA RE Access Time 35 ns tCEA CE Access Time 45 ns tCLEA CLE Access Time 45 ns tALEA ALE Access Time 45 ns tOH Data Output Hold Time 10 ns tRHZ RE High to Output High Impedance 30 ns tCHZ CE High to Output High Impedance 20 ns tREH RE High Hold Time 15 ns tIR Output-High-impedance-to- RE Falling Edge 0 ns tRHW RE High to WE Low 30 ns tWHC WE High to CE Low 30 ns tWHR WE High to RE Low 30 ns tR Memory Cell Array to Starting Address 25 µs tWB WE High to Busy 200 ns tRST Device Reset Time (Ready/Read/Program/Erase) 6/6/10/500 µs |
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