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SI2200-X-GM Arkusz danych(PDF) 4 Page - Silicon Laboratories |
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SI2200-X-GM Arkusz danych(HTML) 4 Page - Silicon Laboratories |
4 / 30 page Si2200 4 Rev. 1.0 1. Electrical Specifications Table 1. Recommended Operating Conditions1,2 Parameter Symbol Test Condition Min Typ Max Unit Ambient Operating Temperature TA –40 25 85 °C Ambient Functional Temperature TF –40 25 95 °C Supply Voltage VDD 2.9 3.3 3.6 V Supply Voltages Difference V∆ (VDDR – VDDD), (VDDI – VDDD) –0.3 — 0.3 V Notes: 1. All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated. 2. Minimum and maximum specifications are not guaranteed across the functional temperature range. Table 2. Absolute Maximum Ratings1,2 Parameter Symbol Value Unit DC Supply Voltage VDD –0.5 to 4.0 V Input Current3 I IN ±10 mA Input Voltage3 V IN –0.3 to VDD+0.3 V Storage Temperature Range TSTG –55 to 150 oC Notes: 1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of this device should only be done at ESD-protected workstations. 3. For signals SCLK, SDATA, SEN, PWDN, and XIN. |
Podobny numer części - SI2200-X-GM |
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Podobny opis - SI2200-X-GM |
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