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ST6006S Arkusz danych(PDF) 3 Page - Stanson Technology |
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ST6006S Arkusz danych(HTML) 3 Page - Stanson Technology |
3 / 8 page N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V/60A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10uA 60 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=50uA 1.0 3.0 V Gate Leakage Current IGSS VDS=0V,VGS=20V 100 nA VDS=60V,VGS=0V 1 VDS=20V,VGS=0V TJ=125℃ Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V TJ=175℃ 50 uA On-State Drain Current ID(on) VDS=5V,VGS=10V 60 A VGS=10V,ID=30A 12 16 VGS=10V,ID=30A TJ=125℃ 24 30 VGS=10V,ID=30A TJ=175℃ 31 37 Drain-source On-Resistance RDS(on) VGS=5V,ID=30A 14 19 mΩ Forward Transconductance gfs VDS=15V,ID=30A 49 S Diode Forward Voltage VSD IF=60A,VGS=0V 1.6 V Dynamic Total Gate Charge Qg 39 60 Gate-Source Charge Qgs 12 Gate-Drain Charge Qgd VDS=30V,VGS=10V ID≡60A 10 nC Input Capacitance Ciss 2000 Output Capacitance Coss 400 Reverse Transfer Capacitance Crss VDS=25V,VGS=0V F=1MHz 115 pF 12 25 Turn-On Time td(on) tr 36 60 34 60 Turn-Off Time td(off) tf VDD=10V,RL=5.5Ω ID=3.6A,VGEN=4.5V RG=6Ω 10 25 nS Page3 |
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