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SI4430BDY Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI4430BDY Arkusz danych(HTML) 1 Page - Vishay Siliconix |
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1 / 1 page Specification Comparison Vishay Siliconix Document Number 74061 www.vishay.com 06-May-05 Si4430BDY vs. Si4430DY Description: N-Channel, 30-V (D-S) MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4430BDY-T1-E3 Replaces Si4430DY-T1-E3 Si4430BDY-T1-E3 Replaces Si4430DY-T1 Summary of Performance: The Si4430BDY is the replacement to the original Si4430DY; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si4430BDY Si4430DY Unit Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS +20 +20 V TA = 25°C 20 23 Continuous Drain Current TA = 70°C ID 16 19 Pulsed Drain Current IDM 60 60 Continuous Source Current (MOSFET Diode Conduction) IS 2.7 2.9 A TA = 25°C 3.0 3.5 Power Dissipation TA = 70°C PD 2.0 2.2 W Operating Junction & Storage Temperature Range Tj & Tstg -55 to 150 -55 to 150 °C Maximum Junction-to-Ambient RthJA 41 35 °C/W SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Si4430BDY Si4430DY Parameter Symbol Min Typ Max Min Typ Max Unit Static Gate-Threshold Voltage VGS(th) 1.0 3.0 1.7 V Gate-Body Leakage IGSS +100 +100 nA Zero Gate Voltage Drain Current IDSS 1 1 µA On-State Drain Current VGS = 10 V ID(on) 40 30 A VGS= 10 V 0.0037 0.0045 0.004 NS Drain-Source On-Resistance VGS = 4.5 V rDS(on) 0.0048 0.006 0.0068 0.008 Ω Forward Transconductance gfs 80 80 S Diode Forward Voltage VSD 0.72 1.1 0.8 1.2 V Dynamic Total Charge Qg 24 36 36 55 Gate-Source Charge Qgs 10.5 15 Gate-Drain Charge Qgd 7.5 12 nC Gate Resistance Rg 0.5 1.1 1.7 1.0 2.2 3.7 Ω Switching td(on) 20 30 20 30 Turn-On Time* tr 14 22 15 23 td(off) 60 90 105 160 Turn-Off Time* tf 18 30 40 60 Source-Drain Reverse Recovery Time trr 35 50 50 80 ns |
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