• 221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 240, REV A
SILICON SCHOTTKY RECTIFIER DIE
Ultra Low Reverse Leakage
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Ultra low Reverse Leakage Current
•
Soft Reverse Recovery at Low and High Temperature2
•
Very Low Forward Voltage Drop
•
Low Power Loss, High Efficiency
•
High Surge Capacity
•
Guard Ring for Enhanced Durability and Long Term Reliability
•
Guaranteed Reverse Avalanche Characteristics
•
Electrically / Mechanically Stable during and after packaging
•
Out Performs 100 Volt Ultrafast Rectifiers
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
100
V
Max. Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form
16
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
10 ms, Sine pulse
(1)
240
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25 °C, IAS = 0.6 A,
L = 30mH
8.8
mJ
Repetitive Avalanche
Current
IAR
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
0.6
A
Max. Junction Temperature
TJ
-
-55 to +175
°C
Max. Storage Temperature
Tstg
-
-55 to +175
°C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 16A, Pulse, TJ = 25 °C
0.85
V
VF2
@ 16A, Pulse, TJ = 125 °C
0.69
V
Max. Reverse Current
IR1
@VR = 100V, Pulse,
TJ = 25 °C
10
µA
IR2
@VR = 100V, Pulse,
TJ = 125 °C
1.0
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
ISIG = 50mV (p-p)
500
pF
(1) in SHD package
SD125SB100A/B/C
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