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TC7MET139AFK Arkusz danych(PDF) 4 Page - Toshiba Semiconductor

Numer części TC7MET139AFK
Szczegółowy opis  TOSHIBA CMOS Didital Integrated Circuit Silicon Monolithic
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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TC7MET139AFK
2001-09-12
4
Electrical Characteristics
DC Characteristics
Ta
= 25°C
Ta
= -40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
High level
VIH
¾
4.5~5.5
2.0
¾
¾
2.0
¾
Input voltage
Low level
VIL
¾
4.5~5.5
¾
¾
0.8
¾
0.8
V
IOH = -50 mA
4.5
4.4
4.5
¾
4.4
¾
High level
VOH
VIN = VIH
or VIL
IOH = -8 mA
4.5
3.94
¾
¾
3.80
¾
IOL = 50 mA
4.5
¾
0
0.1
¾
0.1
Output voltage
Low level
VOL
VIN = VIH
or VIL
IOL = 8 mA
4.5
¾
¾
0.36
¾
0.44
V
Input leakage current
IIN
VIN = 5.5 V or GND
0~5.5
¾
¾
±0.1
¾
±1.0
mA
ICC
VIN = VCC or GND
5.5
¾
¾
4.0
¾
40.0
mA
Quiescent supply current
ICCT
Per input: VIN = 3.4 V
Other input: VCC or GND
5.5
¾
¾
1.35
¾
1.50
mA
Output leakage current
IOPD
VOUT = 5.5 V
0
¾
¾
0.5
¾
5.0
mA
AC Characteristics (Input: tr
==== tf ==== 3 ns)
Ta
= 25°C
Ta
= -40~85°C
Characteristics
Symbol
Test Condition
VCC (V) CL (pF)
Min
Typ.
Max
Min
Max
Unit
15
¾
5.0
7.2
1.0
8.5
Propagation delay time
(A, B- Y )
tpLH
tpHL
¾
5.0
± 0.5
50
¾
6.5
9.2
1.0
10.5
ns
15
¾
5.0
7.2
1.0
8.5
Propagation delay time
( G - Y )
tpLH
tpHL
¾
5.0
± 0.5
50
¾
6.5
9.2
1.0
10.5
ns
Input capacitance
CIN
¾
¾
4
10
¾
10
pF
Power dissipation capacitance
CPD
(Note6)
¾
32
¾
¾
¾
pF
Note6: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC/2 (per decoder)


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