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TC35C25 Arkusz danych(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC35C25 Arkusz danych(HTML) 2 Page - TelCom Semiconductor, Inc |
2 / 7 page 4-112 TELCOM SEMICONDUCTOR, INC. ELECTRICAL CHARACTERISTICS: Unless otherwise stated, these specifications apply for – 40 °C < TA < +85 °C for the TC25C25Exx; and 0°C <TA < +70°C for the TC35C25Cxx; VIN and VDD = 16V; RT = 3.7kΩ; CT = 1000pF; RD = 760Ω. Parameter Test Conditions Min Typ Max Units Reference Section Output Voltage TJ = 25°C, IO = 1mA 3.9 4 4.1 V Line Regulation VIN = 8V to 18V — ±4 ±10 mV Load Regulation II = 1mA to mA — ±4 ±15 mV Temp Coefficient Note 1 — ±0.01 ±0.4 mV/ °C VREF Worst Case 3.85 4 4.15 V Long Term Drift TJ = 25°C, (Note 1) — ±50 — mV/1000Hrs Short Circuit VREF to GND 20 40 70 mA Output Noise TJ = 25°C, 10 Hz ≤ f ≥ 10 kHz, (Note 1) — 21 — µV(rms) Oscillator Section Initial Accuracy TJ = 25°C, at 97 kHz — ±2 ±3% Voltage Coefficient VIN = 8V to 18V — ±0.01 ±0.1 %/V Temp Coefficient Note 1 — ±0.025 ±0.06 %/ °C OSC Ramp Amplitude 2.9 3.2 3.4 V Reset Switch RDS (ON) TJ = 25°C30 50 60 Ω Clock Amplitude fosc = 100kHz, RL = 1MΩ, (Note 1) 4.9 5.5 6.7 V Clock Min Width TJ = 25°C, RD = 0Ω, (Note 1) — 170 200 nsec CT = 100pF, RT = 1Ω Sync Threshold RT Pin Tied to VREF, CT Pin at GND 1.8 2.2 2.8 V Sync Input Current Sync Voltage = 4V, V(RT) = 4V — — ±1 µA Min Sync Pulse Width TJ = 25°C, Sync Amplitude = 5V, (Note 1) — 130 175 nsec Max OSC Freq RT = 1Ω, CT = 100pF, RD = 0Ω, (Note 1) 1.0 — — MHz Error Amplifier Section (VCM = 2.5V) Input Offset Voltage — ±5 ±15 mV Input Bias Current TJ = 25°C— ±50 ±200 pA Input Offset Current TJ = 25°C— ±25 ±100 pA DC Open Loop Gain RL = 100kΩ 70 85 — dB Gain Bandwidth Product Note 1 0.7 0.9 1.2 MHz Output Low Level RL = 100kΩ (N Channel) — 10 20 mV Output High Level RL = 100kΩ (NPN) 4.9 5.4 5.9 V CMRR VCM = 0.5 to 4.7V 60 75 — dB ABSOLUTE MAXIMUM RATINGS* Supply Voltage ............................................................ 18V Maximum Chip Temperature ................................... 150 °C Storage Temperature ............................ – 65 °C to +150°C Lead Temperature (10 sec) ..................................... 300 °C Package Thermal Resistance PDIP RθJ-A ..................................................................... 125°C/W PDIP RθJ-C ........................................................................ 45°C/W SOIC RθJ-A ..................................................................... 250°C/W SOIC RθJ-A ........................................................................ 75°C/W Operating Temperature 25C2x ........................................ – 40 °C ≤ TA ≤ +85°C 35C2x ............................................. 0 °C ≤ TA ≤ +70°C *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. BICMOS PWM CONTROLLERS TC25C25 TC35C25 |
Podobny numer części - TC35C25 |
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Podobny opis - TC35C25 |
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