4-112

TELCOM SEMICONDUCTOR, INC.

+85

Parameter

Test Conditions

Min

Typ

Max

Units

Reference Section

Output Voltage

3.9

4

4.1

V

Line Regulation

—

±4

±10

mV

Load Regulation

—

±4

±15

mV

Temp Coefficient

Note 1

—

±0.01

±0.4

mV/

°C

Worst Case

3.85

4

4.15

V

Long Term Drift

—

±50

—

mV/1000Hrs

Short Circuit

20

40

70

mA

Output Noise

—

21

—

µV(rms)

Oscillator Section

Initial Accuracy

—

±2

±3%

Voltage Coefficient

—

±0.01

±0.1

%/V

Temp Coefficient

Note 1

—

±0.025

±0.06

%/

°C

OSC Ramp Amplitude

2.9

3.2

3.4

V

50

60

Ω

Clock Amplitude

4.9

5.5

6.7

V

Clock Min Width

—

170

200

nsec

Sync Threshold

1.8

2.2

2.8

V

Sync Input Current

—

—

±1

µA

Min Sync Pulse Width

—

130

175

nsec

Max OSC Freq

1.0

—

—

MHz

Input Offset Voltage

—

±5

±15

mV

Input Bias Current

±50

±200

pA

Input Offset Current

±25

±100

pA

DC Open Loop Gain

70

85

—

dB

Gain Bandwidth Product

Note 1

0.7

0.9

1.2

MHz

Output Low Level

—

10

20

mV

Output High Level

4.9

5.4

5.9

V

CMRR

60

75

—

dB

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ............................................................ 18V

Maximum Chip Temperature ................................... 150

°C

Storage Temperature ............................ – 65

°C to +150°C

Lead Temperature (10 sec) ..................................... 300

°C

Package Thermal Resistance

Operating Temperature

25C2x ........................................ – 40

35C2x ............................................. 0

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operational sections of the specifications is not implied.

BICMOS PWM CONTROLLERS

TC25C25

TC35C25