TPCF8101 datasheet(3/6 Pages) TOSHIBA

Numer części	TPCF8101

Szczegółowy opis	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

Download	6 Pages

Scroll/Zoom	100%

Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

Logo

3 / 6 page

TPCF8101

2002-08-28

3

Drain-source voltage VDS (V)

ID – VDS

Drain-source voltage VDS (V)

ID – VDS

Gate-source voltage VGS (V)

ID – VGS

Gate-source voltage VGS (V)

VDS – VGS

Drain current ID (A)

0

-0.2

-0.4

-0.6

-0.8

-1.0

-1

-2

-3

-4

-5

VGS = -1.4 V

-1.5

-1.6

-1.7

-1.8

-1.9

-2

-3

-4.5

Common source

Ta

= 25°C Pulse test

-4

-5

-2.5

0

-0.5

-1.0

-1.5

-2.0

-2.5

-2

-4

-6

-8

-10

Ta

= -55°C

Ta

= 100°C

Ta

= 25°C

Common source

VDS = -10 V

Pulse test

0

-2

-4

-6

-10

-0.1

-0.2

-0.3

-0.4

-0.5

-8

Common source

Ta

= 25°C

Pulse test

ID = -6 A

-3 A

-1.5 A

|Yfs| – ID

RDS (ON) – ID

1

-0.1

-1

-10

-100

10

100

1000

Common source

Ta

= 25°C

Pulse test

VGS = -4.5 V

-2.5 V

-1.8 V

0.1

-0.1

-1

-10

-100

1

10

100

Common source

VDS = -10 V

Pulse test

Ta

= 100°C

Ta

= -55°C

Ta

= 25°C

0

-1

-2

-3

-4

-5

-2

-4

-6

-8

-10

VGS = -1.4 V

-1.5

-1.6

-1.7

-1.8

-1.9

-2

-2.5

-3

-4

-5

Common source

Ta

= 25°C Pulse test

Podobny numer części - TPCF8101

Producent	Numer części	Arkusz danych	Szczegółowy opis
Toshiba Semiconductor	TPCF8101	212Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPCF8101	1Mb / 73P	Bipolar Small-Signal Transistors
	TPCF8101	212Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

More results

Podobny opis - TPCF8101

Producent	Numer części	Arkusz danych	Szczegółowy opis
Toshiba Semiconductor	TPC8110	406Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPCF8102	212Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPCF8301	196Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPCP8101	227Kb / 7P	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
	TPCF8101	212Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPCF8103	264Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPC6105	226Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPCP8402	162Kb / 6P	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
	TPCP8402	304Kb / 11P	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
	TPCF8402	274Kb / 11P	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

More results

TPCF8101 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor

TPCF8101 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor

Podobny numer części - TPCF8101

Podobny opis - TPCF8101

Html Pages

1 2 3 4 5 6

Arkusz danych Pobierz

Link URL