SI7407DN datasheet(2/5 Pages) VISHAY

Numer części	SI7407DN

Szczegółowy opis	P-Channel 12-V (D-S) MOSFET

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Si7407DN

Vishay Siliconix

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www.vishay.com

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Document Number: 71912

S-22122—Rev. B, 25-Nov-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -400 mA

-0.40

-1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

VDS = -9.6 V, VGS = 0 V

-1

m

Zero Gate Voltage Drain Current

IDSS

VDS = -9.6 V, VGS = 0 V, TJ = 85_C

-5

mA

On-State Drain Currenta

ID(on)

VDS v -5 V, VGS = -4.5 V

-30

A

VGS = -4.5 V, ID = -15.6 A

0.009

0.012

Drain-Source On-State Resistancea

rDS(on)

VGS = -2.5 V, ID = -13.5 A

0.013

0.016

W

DS(on)

VGS = -1.8 V, ID = -5 A

0.019

0.024

Forward Transconductancea

gfs

VDS = -6 V, ID = -15.6 A

52

S

Diode Forward Voltagea

VSD

IS = -3.2 A, VGS = 0 V

-0.7

-1.2

V

Dynamicb

Total Gate Charge

Qg

39

59

Gate-Source Charge

Qgs

VDS = -6 V, VGS = -4.5 V, ID = -15.6 A

6

nC

Gate-Drain Charge

Qgd

11

Turn-On Delay Time

td(on)

30

45

Rise Time

tr

VDD = -6 V, RL = 6 W

50

75

Turn-Off Delay Time

td(off)

VDD = -6 V, RL = 6 W

ID ^ -1 A, VGEN = -4.5 V, RG = 6 W

200

300

ns

Fall Time

tf

165

250

Source-Drain Reverse Recovery Time

trr

IF = -3.2 A, di/dt = 100 A/ms

60

90

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

5

10

15

20

25

30

0.0

0.4

0.8

1.2

1.6

2.0

0

5

10

15

20

25

30

01234

VGS = 5 thru 2 V

25

_C

TC = 125_C

1 V

-55

_C

1.5 V

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Podobny numer części - SI7407DN

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Podobny opis - SI7407DN

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI2335DS	48Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. A, 23-Oct-00
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	SI2333DS	243Kb / 3P	P-Channel 12-V (D-S) MOSFET Rev. B, 21-Mar-05
	SI2333DS-T1	195Kb / 9P	P-Channel 12-V (D-S) MOSFET Rev. C, 02-Feb-09
	SI2333CDS	104Kb / 6P	P-Channel 12-V (D-S) MOSFET Rev. A, 23-Jun-08
	SI5475DC	109Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. B, 05-Aug-02
VBsemi Electronics Co.,...	MMSF4P01HDR2G	878Kb / 6P	P-Channel 12-V (D-S) MOSFET
Vishay Siliconix	SI2333DS	199Kb / 9P	P-Channel 12-V (D-S) MOSFET Rev. C, 02-Feb-09

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