KSD-T6O002-000

3

STK0240D

Electrical Characteristics

(Tc=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

400

-

-

V

Gate-threshold voltage

3.0

-

5.0

V

Drain-source leakage current

-

-

1

µA

Gate-source leakage

-

-

±100

nA

Drain-Source on-resistance

④

-

4.2

5.0

Ω

Forward transfer admittance

④

-

1.4

-

S

Input capacitance

Ciss

-

127

190

Output capacitance

Coss

-

25

37.5

Reverse transfer capacitance

Crss

-

4.9

7.4

pF

Turn-on delay time

-

8.5

-

Rise time

-

3.9

-

Turn-off delay time

-

9

-

Fall time

-

3.9

-

ns

Total gate charge

-

4.6

6.9

Gate-source charge

-

1.1

-

Gate-drain charge

-

1.7

-

nC

Source-Drain Diode Ratings and Characteristics

(Tc=25

°C)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Continuous source current

-

-

2

Source current (Pulsed)

①

Integral reverse diode

in the MOSFET

-

-

8

A

Forward voltage

④

-

-

1.4

V

Reverse recovery time

-

180

-

ns

Reverse recovery charge

-

0.64

-

uC

Note ;

①

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

②

③

Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%

④

Essentially independent of operating temperature