1996 Oct 14

2

Philips Semiconductors

Product specification

Schottky barrier diode

1PS76SB10

FEATURES

• Low forward voltage

• Guard ring protected

• Very small plastic SMD package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode encapsulated in a SOD323 very small plastic

SMD package.

Fig.1 Simplified outline (SOD323) and symbol.

Marking code: S0.

The marking bar indicates the cathode.

handbook, 4 columns

ka

MAM283

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

30

V

continuous forward current

−

200

mA

repetitive peak forward current

−

300

mA

non-repetitive peak forward current

−

600

mA

storage temperature

−65

+150

°C

junction temperature

−

125

°C

operating ambient temperature

−65

+125

°C