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1PS79SB10 Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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1PS79SB10 Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 8 page ![]() 1998 Jul 16 3 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SC-79 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF continuous forward voltage see Fig.2 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR continuous reverse current VR = 25 V; note 1; see Fig.3 2 µA Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.4 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 450 K/W |
Podobny numer części - 1PS79SB10 |
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Podobny opis - 1PS79SB10 |
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