SI6542DQ datasheet(2/6 Pages) VISHAY

Numer części	SI6542DQ

Szczegółowy opis	Dual N- and P-Channel 20-V (D-S) MOSFET

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Si6542DQ

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 70171

S-00873—Rev. F, 01-May-00

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

N-Ch

1.0

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

P-Ch

–1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

ZG

V l

D i C

I

VDS = 20 V, VGS = 0 V

N-Ch

1

A

Zero Gate Voltage Drain Current

IDSS

VDS = –20 V, VGS = 0 V

P-Ch

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 55_C

N-Ch

25

mA

VDS = –20 V, VGS = 0 V, TJ = 55_C

P-Ch

–25

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 10 V

N-Ch

14

A

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –10 V

P-Ch

–10

A

DiS

OS

R

i

a

VGS = 10 V, ID = 2.5 A

N-Ch

0.065

0.09

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –10 V, ID = 1.9 A

P-Ch

0.13

0.17

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 1.8 A

N-Ch

0.100

0.175

W

VGS = –4.5 V, ID = 1.3 A

P-Ch

0.26

0.32

Forward Transconductancea

gfs

VDS = 15 V, ID = 2.5 A

N-Ch

5

S

Forward Transconductancea

gfs

VDS = –15 V, ID = – 1.9 A

P-Ch

3

S

Diode Forward Voltagea

VSD

IS = 1.25 A, VGS = 0 V

N-Ch

0.8

1.2

V

Diode Forward Voltagea

VSD

IS = –1.25 A, VGS = 0 V

P-Ch

0.8

–1.2

V

Dynamicb

Total Gate Charge

Qg

NCh

l

N-Ch

7

10

C

Total Gate Charge

Qg

N-Channel

P-Ch

7

10

C

Gate-Source Charge

Qgs

N Channel

VDS = 10 V, VGS = 10 V, ID = 2.5 A

N-Ch

0.9

nC

Gate-Source Charge

Qgs

P-Channel

VDS =10 V VGS =10 V ID =1 9 A

P-Ch

1.3

nC

Gate-Drain Charge

Qgd

VDS = –10 V, VGS = –10 V, ID = –1.9 A

N-Ch

2.1

Gate-Drain Charge

Qgd

P-Ch

1.7

Turn-On Delay Time

td(on)

NCh

l

N-Ch

11

20

Turn-On Delay Time

td(on)

NCh

l

P-Ch

9

20

Rise Time

tr

N-Channel

VDD = 10 V, RL = 10 W

N-Ch

11

20

Rise Time

tr

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

P-Ch

12

25

Turn-Off Delay Time

td(off)

P-Channel

V10 V R

10

W

N-Ch

16

30

ns

Turn-Off Delay Time

td(off)

VDD = –10 V, RL = 10 W

ID ^ –1 A, VGEN = –10 V, RG = 6 W

P-Ch

17

30

ns

Fall Time

tf

ID

1 A, VGEN

10 V, RG

6

W

N-Ch

6

15

Fall Time

tf

P-Ch

6

15

Source-Drain Reverse Recovery Time

trr

IF = 1.25 A, di/dt = 100 A/ms

N-Ch

45

70

Source-Drain Reverse Recovery Time

trr

IF = –1.25 A, di/dt = 100 A/ms

P-Ch

35

70

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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