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2PB710AQ Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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2PB710AQ Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 May 31 3 Philips Semiconductors Product specification PNP general purpose transistor 2PB710A THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −60 V −−10 nA IE = 0; VCB = −60 V; Tj = 150 °C −−5 µA IEBO emitter cut-off current IC = 0; VEB = −5V −−10 nA hFE DC current gain IC = −150 mA; VCE = −10 V; note 1 2PB710AQ 85 170 2PB710AR 120 240 2PB710AS 170 340 DC current gain IC = −500 mA; VCE = −10 V; note 1 40 − VCEsat collector-emitter saturation voltage IC = −300 mA; IB = −30 mA; note 1 −−600 mV VBEsat base-emitter saturation voltage IC = −300 mA; IB = −30 mA; note 1 −−1.5 V Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz − 15 pF fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz; note 1 2PB710AQ 100 − MHz 2PB710AR 120 − MHz 2PB710AS 140 − MHz |
Podobny numer części - 2PB710AQ |
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Podobny opis - 2PB710AQ |
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