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2PB709AS Arkusz danych(PDF) 3 Page - NXP Semiconductors

Numer części 2PB709AS
Szczegółowy opis  PNP general purpose transistor
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PB709AS Arkusz danych(HTML) 3 Page - NXP Semiconductors

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1999 Apr 23
3
Philips Semiconductors
Product specification
PNP general purpose transistor
2PB709A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −45 V
−−10
nA
IE = 0; VCB = −45 V; Tj = 150 °C
−−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−10
nA
hFE
DC current gain
IC = −2 mA; VCE = −10 V
2PB709AQ
160
260
2PB709AR
210
340
2PB709AS
290
460
VCEsat
collector-emitter saturation
voltage
IC = −100 mA; IB = −10 mA; note 1
−−500
mV
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
5pF
fT
transition frequency
IC = −1 mA; VCE = −10 V; f = 100 MHz
2PB709AQ
60
MHz
2PB709AR
70
MHz
2PB709AS
80
MHz


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