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2PD1820AS Arkusz danych(PDF) 3 Page - NXP Semiconductors

Numer części 2PD1820AS
Szczegółowy opis  NPN general purpose transistor
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PD1820AS Arkusz danych(HTML) 3 Page - NXP Semiconductors

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1999 Apr 12
3
Philips Semiconductors
Product specification
NPN general purpose transistor
2PD1820A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
10
nA
IE = 0; VCB =20V; Tj = 150 °C
5
µA
IEBO
emitter cut-off current
IC = 0; VEB =4V
10
nA
hFE
DC current gain
IC = 150 mA; VCE = 10 V; note 1
2PD1820AQ
85
170
2PD1820AR
120
240
2PD1820AS
170
340
hFE
DC current gain
IC = 500 mA; VCE = 10 V; note 1
40
VCEsat
collector-emitter saturation voltage
IC = 300 mA; IB = 30 mA; note 1
600
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
15
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz;
note 1
150
MHz


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