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GS8160EV18AT-250I Arkusz danych(PDF) 10 Page - GSI Technology

Numer części GS8160EV18AT-250I
Szczegółowy opis  1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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Producent  GSI [GSI Technology]
Strona internetowa  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS8160EV18AT-250I Arkusz danych(HTML) 10 Page - GSI Technology

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Rev: 1.00a 6/2003
10/24
© 2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8160EV18/32/36AT-350/333/300/250/225/200/150
Preliminary
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
WR
R
WR
X
X
X
CR
R
CW
CR
CR
Simplified State Diagram
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (BA, BB, BC, BD, BW, and GW)
control inputs, and that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.


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