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BF5030W Arkusz danych(PDF) 1 Page - Infineon Technologies AG |
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BF5030W Arkusz danych(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page 2006-04-13 1 BF5030... 1 2 3 4 Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF-and VHF - tuners with 3V up to 5V supply voltage • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction EHA07461 GND G1 G2 Drain AGC HF Input HF Output +DC GG V G1 R ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF5030W SOT343 1=D 2=S 3=G1 4=G2 - - KXs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 8 V Continuous drain current ID 25 mA Gate 1/ gate 2-source current ±IG1/2SM 1 Gate 1/ gate 2-source voltage ±VG1/G2S 6 V Total power dissipation TS ≤ 78 °C Ptot 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) Rthchs ≤ 280 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
Podobny numer części - BF5030W |
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Podobny opis - BF5030W |
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