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FQD16N25C Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FQD16N25C Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page 4 www.fairchildsemi.com FQD16N25C Rev. A Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : ※ 1. V GS = 10 V 2. I D = 8.9 A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : ※ 1. V GS = 0 V 2. I D = 250 µ A T J, Junction Temperature [ oC] 25 50 75 100 125 150 0 5 10 15 20 T C, Case Temperature [ oC] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 DC 100ms 10ms 1ms 100 µs 10 µs Operation in This Area is Limited by R DS(on) * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-SourceVoltage[V] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * Notes : 1. Z ?JC(t) = 0.78 0C/W Max. 2. Duty Factor, D=t 1/t2 3. T JM - TC = PDM * Z?JC (t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1, Square Wave Pulse Duration [sec] t1 PDM t2 |
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