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74HCT1G00GV Arkusz danych(PDF) 4 Page - NXP Semiconductors

Numer części 74HCT1G00GV
Szczegółowy opis  2-input NAND gate
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74HCT1G00GV Arkusz danych(HTML) 4 Page - NXP Semiconductors

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2002 May 15
4
Philips Semiconductors
Product specification
2-input NAND gate
74HC1G00; 74HCT1G00
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
see note 1 and 2.
Notes
1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
3. Above 55
°C the value of P
D derates linearly with 2.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC1G
74HCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
VI
input voltage
0
VCC
0
VCC
V
VO
output voltage
0
VCC
0
VCC
V
Tamb
operating ambient
temperature
see DC and AC
characteristics per
device
−40
+25
+125
−40
+25
+125
°C
tr,tf
input rise and fall times
VCC = 2.0 V
−−
1000
−−−
ns
VCC = 4.5 V
−−
500
−−
500
ns
VCC = 6.0 V
−−
400
−−−
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+7.0
V
IIK
input diode current
VI <−0.5 V or VI > VCC + 0.5 V
−±20
mA
IOK
output diode current
VO <−0.5 V or VO > VCC + 0.5 V
−±20
mA
IO
output source or sink current
−0.5 V < VO < VCC + 0.5 V
−±12.5 mA
ICC
VCC or GND current
−±25
mA
Tstg
storage temperature
−65
+150
°C
PD
power dissipation per package
for temperature range from
−40 to +125 °C;
note 3
200
mW


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