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74HCT1G125 Arkusz danych(PDF) 4 Page - NXP Semiconductors |
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74HCT1G125 Arkusz danych(HTML) 4 Page - NXP Semiconductors |
4 / 13 page 2004 Jul 27 4 Philips Semiconductors Product specification Bus buffer/line drivers; 3-state 74HC1G125; 74HCT1G125 RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 55 °C the value of PD derates linearly with 2.5 mW/K. SYMBOL PARAMETER CONDITIONS 74HC1G125 74HCT1G125 UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 − VCC 0 − VCC V VO output voltage 0 − VCC 0 − VCC V Tamb operating ambient temperature see DC and AC characteristics per device −40 +25 +125 −40 +25 +125 °C tr,tf input rise and fall times VCC = 2.0 V −− 1000 −−− ns VCC = 4.5 V −− 500 −− 500 ns VCC = 6.0 V −− 400 −−− ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7.0 V IIK input diode current VI < −0.5 V or VI >VCC + 0.5 V; note 1 −±20 mA IOK output diode current VO < −0.5 V or VO >VCC + 0.5 V; note 1 −±20 mA IO output source or sink current −0.5V<VO <VCC + 0.5 V; note 1 −±12.5 mA ICC VCC or GND current note 1 −±25 mA Tstg storage temperature −65 +150 °C PD power dissipation per package for temperature range from −40 to +125 °C; note 2 − 200 mW |
Podobny numer części - 74HCT1G125 |
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Podobny opis - 74HCT1G125 |
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