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74HCT1G66GV Arkusz danych(PDF) 4 Page - NXP Semiconductors

Numer części 74HCT1G66GV
Szczegółowy opis  Bilateral switch
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74HCT1G66GV Arkusz danych(HTML) 4 Page - NXP Semiconductors

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2002 May 15
4
Philips Semiconductors
Product specification
Bilateral switch
74HC1G66; 74HCT1G66
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
see note 1.
Notes
1. To avoid drawing VCC current out of pin Z, when switch current flows in pin Y, the voltage drop across the
bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no VCC current will flow out of
terminal Y. In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may
not exceed VCC or GND.
2. Above 55
°C the value of PD derates linearly with 2.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC1G66
74HCT1G66
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
10.0
4.5
5.0
5.5
V
VI
input voltage
GND
VCC
GND
VCC
V
VS
switch voltage
GND
VCC
GND
VCC
V
Tamb
operating ambient
temperature
see DC and AC
characteristics per
device
−40
+125
−40
+125
°C
tr,tf
input rise and fall times
VCC = 2.0 V
−−
1000
−−−
ns
VCC = 4.5 V
6.0
500
6.0
500
ns
VCC = 6.0 V
−−
400
−−−
ns
VCC = 10.0 V
−−
250
−−−
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+11.0
V
IIK
input diode current
VI <− 0.5 V or VI > VCC + 0.5 V
−±20
mA
ISK
switch diode current
VS <− 0.5 V or VS > VCC + 0.5 V
−±20
mA
IS
switch source or sink current
−0.5 V < VS < VCC + 0.5 V
−±25
mA
ICC
VCC or GND current
−±50
mA
Tstg
storage temperature
−65
+150
°C
PD
power dissipation per package
for temperature range from
−40 to + 125 °C;
note 2
200
mW
PS
power dissipation per switch
100
mW


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