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74HCT1G66GV Arkusz danych(PDF) 4 Page - NXP Semiconductors |
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74HCT1G66GV Arkusz danych(HTML) 4 Page - NXP Semiconductors |
4 / 20 page 2002 May 15 4 Philips Semiconductors Product specification Bilateral switch 74HC1G66; 74HCT1G66 RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V); see note 1. Notes 1. To avoid drawing VCC current out of pin Z, when switch current flows in pin Y, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no VCC current will flow out of terminal Y. In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may not exceed VCC or GND. 2. Above 55 °C the value of PD derates linearly with 2.5 mW/K. SYMBOL PARAMETER CONDITIONS 74HC1G66 74HCT1G66 UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 10.0 4.5 5.0 5.5 V VI input voltage GND − VCC GND − VCC V VS switch voltage GND − VCC GND − VCC V Tamb operating ambient temperature see DC and AC characteristics per device −40 − +125 −40 − +125 °C tr,tf input rise and fall times VCC = 2.0 V −− 1000 −−− ns VCC = 4.5 V − 6.0 500 − 6.0 500 ns VCC = 6.0 V −− 400 −−− ns VCC = 10.0 V −− 250 −−− ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +11.0 V IIK input diode current VI <− 0.5 V or VI > VCC + 0.5 V −±20 mA ISK switch diode current VS <− 0.5 V or VS > VCC + 0.5 V −±20 mA IS switch source or sink current −0.5 V < VS < VCC + 0.5 V −±25 mA ICC VCC or GND current −±50 mA Tstg storage temperature −65 +150 °C PD power dissipation per package for temperature range from −40 to + 125 °C; note 2 − 200 mW PS power dissipation per switch − 100 mW |
Podobny numer części - 74HCT1G66GV |
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Podobny opis - 74HCT1G66GV |
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