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74HCT595BQ Arkusz danych(PDF) 8 Page - NXP Semiconductors |
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74HCT595BQ Arkusz danych(HTML) 8 Page - NXP Semiconductors |
8 / 28 page 2003 Jun 25 8 Philips Semiconductors Product specification 8-bit serial-in, serial or parallel-out shift register with output latches; 3-state 74HC595; 74HCT595 RECOMMENDED OPERATING CONDITIONS LIMITED VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). Note 1. For DIP16 packages: above 70 °C derate linearly with 12 mW/K. For SO16 packages: above 70 °C derate linearly with 8 mW/K. For SSOP16 packages: above 60 °C derate linearly with 5.5 mW/K. For TSSOP16 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN16 packages: above 60 °C derate linearly with 4.5 mW/K. SYMBOL PARAMETER CONDITIONS 74HC 74HCT UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 − VCC 0 − VCC V VO output voltage 0 − VCC 0 − VCC V Tamb ambient temperature −40 − +125 −40 − +125 °C tr,tf input rise and fall time VCC = 2.0 V −− 1000 −−− ns VCC = 4.5 V − 6.0 500 − 6.0 500 ns VCC = 6.0 V −− 400 −−− ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7.0 V IIK input diode current VI < −0.5 V to VI >VCC + 0.5 V −±20 mA IOK output diode current VO < −0.5 V to VO >VCC + 0.5 V −±20 mA IO output source or sink current VO = −0.5 V to VCC + 0.5 V Q7’ standard output −±25 mA Qn bus driver outputs −±35 mA ICC, IGND VCC or GND current −±70 mA Tstg storage temperature −65 +150 °C Ptot power dissipation Tamb = −40 to +125 °C; note 1 − 500 mW |
Podobny numer części - 74HCT595BQ |
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Podobny opis - 74HCT595BQ |
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