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STD100NH02L-1 Arkusz danych(PDF) 2 Page - STMicroelectronics |
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STD100NH02L-1 Arkusz danych(HTML) 2 Page - STMicroelectronics |
2 / 12 page STD100NH02L 2/12 THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (5) DYNAMIC Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.5 100 275 °C/W °C/W °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 25 mA, VGS = 0 24 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = 20 V VDS = 20 V TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 1 1.8 V RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 30 A VGS = 5 V ID = 15 A 0.0042 0.005 0.0048 0.009 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (5) Forward Transconductance VDS = 10 V ID = 30 A 50 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V f = 1 MHz VGS = 0 3940 1020 110 pF pF pF RG Gate Input Resistance f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 1.1 Ω |
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