STB11NM60FD datasheet(4/17 Pages) STMICROELECTRONICS

Numer części	STB11NM60FD

Szczegółowy opis	N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

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Electrical characteristics

STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP

4/17

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

600

V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

1

µA

VDS=Max rating, TC=125°C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±30V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 5.5A

0.40

0.45

W

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID =5.5A

5.2

S

Ciss

Input capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

900

pF

Coss

Output capacitance

350

pF

Crss

Reverse transfer

capacitance

35

pF

Coss eq

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance

VGS = 0V, VDS = 0V to

400V

100

pF

RG

Gate input resistance

f=1 MHz Gate DC Bias= 0

test signal level = 20mV

open drain

3

Ω

Qg

Total gate charge

VDD = 400V, ID = 11A,

VGS = 10V

(see Figure 15)

28

40

nC

Qgs

Gate-source charge

7.8

nC

Qgd

Gate-drain charge

13

nC

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