2SK3446 datasheet(5/10 Pages) RENESAS

Numer części	2SK3446

Szczegółowy opis	Silicon N Channel Power MOS FET Power Switching

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Producent	RENESAS [Renesas Technology Corp]

Strona internetowa	http://www.renesas.com

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5 / 10 page

2SK3446

Rev.6, Jan. 2003, page 5 of 10

Drain Current

I

(A)

D

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature

Tc

(

°C)

Static Drain to Source on State Resistance

vs. Temperature

0.1

1

10

0.3

3

10

2

5

1

0.2

0.1

0.5

V

= 2.5 V

GS

Pulse Test

4 V

5

4

3

2

1

–25

0

25

50

75

100 125 150

0

ID = 1 A

0.5 A

0.2 A

VGS = 2.5 V

Gate to Source Voltage

V

(V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

3

2

1

0

2

04

68

10

0.5 A

0.2 A

Pulse Test

I

= 1 A

D

Drain Current I

(A)

D

Forward Transfer Admittance vs.

Drain Current

0.01 0.03

0.1

0.3

1

3

10

1

3

0.3

0.03

0.1

0.01

DS

V

= 10 V

Pulse Test

25

°C

Tc = -25

°C

75

°C

0.5 A

0.2 A

Pulse Test

VGS = 4 V

I

= 1 A

D

Podobny numer części - 2SK3446

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Renesas Technology Corp	2SK3446TZ-E	82Kb / 7P	Silicon N Channel Power MOS FET Power Switching
	2SK3446	82Kb / 7P	Silicon N Channel Power MOS FET Power Switching
	2SK3446	101Kb / 9P	Silicon N Channel Power MOS FET Power Switching

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2SK3446 Arkusz danych(PDF) 5 Page - Renesas Technology Corp

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Podobny numer części - 2SK3446

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