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BAT18 Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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BAT18 Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 4 page 1996 Mar 13 3 Philips Semiconductors Product specification Band-switching diode BAT18 GRAPHICAL DATA (1) Tj =60 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. Fig.2 Forward current as a function of forward voltage. handbook, halfpage 0 1.5 100 0 50 MBG312 0.5 1 I F (mA) V (V) F (1) (2) (3) VR =20V. Solid line: maximum values. Dotted line: typical values. Fig.3 Reverse current as a function of junction temperature. handbook, halfpage 10 5 10 4 10 3 10 2 10 −1 10 1 150 0 MBG311 50 100 Tj ( C) o I R (nA) Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 1.5 0 10 −1 MBG313 110 10 2 0.5 1 Cd (pF) VR (V) Fig.5 Diode forward resistance as a function of forward current; typical values. f = 200 MHz; Tj =25 °C. handbook, halfpage 2 0 10 2 MBG314 10 1 1 rD ( Ω) IF (mA) |
Podobny numer części - BAT18 |
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Podobny opis - BAT18 |
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