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BD241 Arkusz danych(PDF) 2 Page - Bourns Electronic Solutions |
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BD241 Arkusz danych(HTML) 2 Page - Bourns Electronic Solutions |
2 / 5 page BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS 2 PRODU CT INFORMA TION JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA (see Note 5) IB = 0 BD241 BD241A BD241B BD241C 45 60 80 100 V ICES Collector-emitter cut-off current VCE = 55 V VCE = 70 V VCE = 90 V VCE =115 V VBE =0 VBE =0 VBE =0 VBE =0 BD241 BD241A BD241B BD241C 0.2 0.2 0.2 0.2 mA ICEO Collector cut-off current VCE = 30 V VCE = 60 V IB =0 IB =0 BD241/241A BD241B/241C 0.3 0.3 mA IEBO Emitter cut-off current VEB = 5 V IC =0 1 mA hFE Forward current transfer ratio VCE = 4 V VCE = 4 V IC = 1 A IC = 3 A (see Notes 5 and 6) 25 10 VCE(sat) Collector-emitter saturation voltage IB = 0.6 A IC = 3 A (see Notes 5 and 6) 1.2 V VBE Base-emitter voltage VCE = 4 V IC = 3 A (see Notes 5 and 6) 1.8 V hfe Small signal forward current transfer ratio VCE = 10 V IC = 0.5 A f = 1 kHz 20 |h fe| Small signal forward current transfer ratio VCE = 10 V IC = 0.5 A f = 1 MHz 3 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 3.125 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = 1 A VBE(off) = -3.7 V IB(on) = 0.1 A RL = 20 Ω IB(off) = -0.1 A tp = 20 µs, dc ≤ 2% 0.3 µs toff Turn-off time 1µs |
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