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BD241C Arkusz danych(PDF) 1 Page - Bourns Electronic Solutions

Numer części BD241C
Szczegółowy opis  NPN SILICON POWER TRANSISTORS
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BD241C Arkusz danych(HTML) 1 Page - Bourns Electronic Solutions

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BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
P R O D UCT
INFORMA TION
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
BD242 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 Ω)
BD241
BD241A
BD241B
BD241C
VCER
55
70
90
115
V
Collector-emitter voltage (IC = 30 mA)
BD241
BD241A
BD241B
BD241C
VCEO
45
60
80
100
V
Emitter-base voltage
VEBO
5V
Continuous collector current
IC
3A
Peak collector current (see Note 1)
ICM
5A
Continuous base current
IB
1A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
40
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
2W
Unclamped inductive load energy (see Note 4)
½LIC
2
32
mJ
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
250
°C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3


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