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BDW63D Arkusz danych(PDF) 1 Page - Bourns Electronic Solutions |
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BDW63D Arkusz danych(HTML) 1 Page - Bourns Electronic Solutions |
1 / 5 page BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS P R O D UCT INFORMA TION 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. ● Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D ● 60 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 2 A B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) BDW63 BDW63A BDW63B BDW63C BDW63D VCBO 45 60 80 100 120 V Collector-emitter voltage (IB = 0) (see Note 1) BDW63 BDW63A BDW63B BDW63C BDW63D VCEO 45 60 80 100 120 V Emitter-base voltage VEB 5V Continuous collector current IC 6A Continuous base current IB 0.1 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 60 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W Unclamped inductive load energy (see Note 4) ½LIC 2 50 mJ Operating junction temperature range Tj -65 to +150 °C Operating temperature range Tstg -65 to +150 °C Operating free-air temperature range TA -65 to +150 °C |
Podobny numer części - BDW63D |
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Podobny opis - BDW63D |
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