BC618 datasheet(3/7 Pages) PHILIPS

Numer części	BC618

Szczegółowy opis	NPN Darlington transistor

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Producent	PHILIPS [NXP Semiconductors]

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2004 Nov 05

3

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistor

BC618

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

80

V

VCES

collector-emitter voltage

VBE =0 V

−

55

V

VEBO

emitter-base voltage

open collector

−

12

V

IC

collector current (DC)

−

500

mA

ICM

peak collector current

−

800

mA

IB

base current (DC)

−

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

625

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

200

K/W

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