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BDW94A Arkusz danych(PDF) 2 Page - Bourns Electronic Solutions

Numer części BDW94A
Szczegółowy opis  PNP SILICON POWER DARLINGTONS
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BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
2
PRODU CT
INFORMA TION
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = -100 mA
IB = 0
(see Note 3)
BDW94
BDW94A
BDW94B
BDW94C
-45
-60
-80
-100
V
ICEO
Collector-emitter
cut-off current
VCB = -40 V
VCB = -60 V
VCB = -80 V
VCB = -80 V
IB =0
IB =0
IB =0
IB =0
BDW94
BDW94A
BDW94B
BDW94C
-1
-1
-1
-1
mA
ICBO
Collector cut-off
current
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW94
BDW94A
BDW94B
BDW94C
BDW94
BDW94A
BDW94B
BDW94C
-0.1
-0.1
-0.1
-0.1
-5
-5
-5
-5
mA
IEBO
Emitter cut-off
current
VEB =
-5 V
IC =0
-2
mA
hFE
Forward current
transfer ratio
VCE =
-3 V
VCE =
-3 V
VCE =
-3 V
IC = -3 A
IC = -10 A
IC = -5 A
(see Notes 3 and 4)
1000
100
750
20000
VCE(sat)
Collector-emitter
saturation voltage
IB = -20 mA
IB = -100 mA
IC = -5 A
IC = -10 A
(see Notes 3 and 4)
-2
-3
V
VBE(sat)
Base-emitter
saturation voltage
IB = -20 mA
IB = -100 mA
IC = -5 A
IC = -10 A
(see Notes 3 and 4)
-2.5
-4
V
VEC
Parallel diode
forward voltage
IE =
-5 A
IE =
-10 A
IB = 0
IB = 0
-2
-4
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.56
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W


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