BU426 datasheet(1/6 Pages) BOURNS

Numer części	BU426

Szczegółowy opis	NPN SILICON POWER TRANSISTORS

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BU426, BU426A

NPN SILICON POWER TRANSISTORS

P R O D UCT

INFORMA TION

1

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

● Rugged Triple-Diffused Planar Construction

● 900 Volt Blocking Capability

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTE

1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.

RATING

SYMBOL

VALUE

UNIT

Collector-base voltage (IE = 0)

BU426

BU426A

VCBO

800

900

V

Collector-emitter voltage (VBE = 0)

BU426

BU426A

VCES

800

900

V

Collector-emitter voltage (IB = 0)

BU426

BU426A

VCEO

375

400

V

Continuous collector current

IC

6A

Peak collector current (see Note 1)

ICM

10

A

Continuous base current

IB

+2, -0.1

A

Peak base current (see Note 1)

IBM

±3

A

Continuous device dissipation at (or below) 50°C case temperature

Ptot

70

W

Operating junction temperature range

Tj

-65 to +150

°C

Storage temperature range

Tstg

-65 to +150

°C

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

B

C

E

1

2

3

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