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BC847BF Arkusz danych(PDF) 4 Page - NXP Semiconductors |
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BC847BF Arkusz danych(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1999 May 18 4 Philips Semiconductors Preliminary specification NPN general purpose transistors BC846F; BC847F; BC848F series THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air; note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V − 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − 5 µA IEBO emitter cut-off current IC = 0; VEB =5V − 100 nA hFE DC current gain IC = 2 mA; VCE =5V BC846AF; BC847AF; BC848AF 110 220 BC846BF; BC847BF; BC848BF 200 450 BC847CF; BC848CF 420 800 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 200 mV IC = 100 mA; IB = 5 mA; note 1 − 400 mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V 580 700 mV IC = 10 mA; VCE =5V − 770 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 1.5 pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − MHz F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 1 kHz; B = 200 Hz − 10 dB |
Podobny numer części - BC847BF |
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Podobny opis - BC847BF |
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