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BC848B Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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BC848B Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 10 page 2004 Feb 06 3 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC846 − 80 V BC847 − 50 V BC848 − 30 V VCEO collector-emitter voltage open base BC846 − 65 V BC847 − 45 V BC848 − 30 V VEBO emitter-base voltage open collector BC846; BC847 − 6V BC848 − 5V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air; note 1 500 K/W |
Podobny numer części - BC848B |
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Podobny opis - BC848B |
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