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SI3850ADV Arkusz danych(PDF) 1 Page - Vishay Siliconix

Numer części SI3850ADV
Szczegółowy opis  Specification Comparison
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SI3850ADV Arkusz danych(HTML) 1 Page - Vishay Siliconix

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Si3850ADV vs. Si3850DV
Specification Comparison
Vishay Siliconix
Document Number: 73853
www.vishay.com
Revision: 31-Oct-06
1
Description:
Complementary MOSFET Half-Bridge (N- and P-Channel)
Package:
TSOP-6
Pin Out:
Identical
Part Number Replacements
Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3
Si3850ADV-T1-E3 Replaces Si3850DV-T1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Si3850ADV
Si3580DV
Unit
Drain-Source Voltage
VDS
N-Ch
20
20
V
P-Ch
- 20
- 20
Gate-Source Voltage
VGS
N-Ch
± 12
± 12
P-Ch
± 12
± 12
Continuous Drain Current
TA = 25 °C
ID
N-Ch
1.4
1.2
A
P-Ch
- 0.96
- 0.85
TA = 70 °C
N-Ch
1.1
0.95
P-Ch
- 0.77
- 0.65
Pulsed Drain Current
IDM
N-Ch
3.5
3.5
P-Ch
- 2.0
- 2.5
Continuous Source Current
(MOSFET Diode Conduction)
IS
N-Ch
0.9
1
P-Ch
- 0.9
- 1
Power Dissipation
TA = 25 °C
PD
1.08
1.25
W
TA = 70 °C
0.7
0.8
Operating Junction and Storage Temperature Range
Tj and Tstg
- 55 to 150
- 55 to 150
°C
Maximum Junction-to-Ambient
RthJA
115
100
°C/W


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