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SI3850ADV Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI3850ADV Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 2 page Si3850ADV vs. Si3850DV Specification Comparison Vishay Siliconix Document Number: 73853 www.vishay.com Revision: 31-Oct-06 1 Description: Complementary MOSFET Half-Bridge (N- and P-Channel) Package: TSOP-6 Pin Out: Identical Part Number Replacements Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3 Si3850ADV-T1-E3 Replaces Si3850DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si3850ADV Si3580DV Unit Drain-Source Voltage VDS N-Ch 20 20 V P-Ch - 20 - 20 Gate-Source Voltage VGS N-Ch ± 12 ± 12 P-Ch ± 12 ± 12 Continuous Drain Current TA = 25 °C ID N-Ch 1.4 1.2 A P-Ch - 0.96 - 0.85 TA = 70 °C N-Ch 1.1 0.95 P-Ch - 0.77 - 0.65 Pulsed Drain Current IDM N-Ch 3.5 3.5 P-Ch - 2.0 - 2.5 Continuous Source Current (MOSFET Diode Conduction) IS N-Ch 0.9 1 P-Ch - 0.9 - 1 Power Dissipation TA = 25 °C PD 1.08 1.25 W TA = 70 °C 0.7 0.8 Operating Junction and Storage Temperature Range Tj and Tstg - 55 to 150 - 55 to 150 °C Maximum Junction-to-Ambient RthJA 115 100 °C/W |
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