BDX37 datasheet(2/8 Pages) PHILIPS

Numer części	BDX37

Szczegółowy opis	NPN switching transistors

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Producent	PHILIPS [NXP Semiconductors]

Strona internetowa	http://www.nxp.com

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2 / 8 page

1997 Apr 16

2

Philips Semiconductors

Product speciﬁcation

NPN switching transistors

BDX35; BDX36; BDX37

FEATURES

• High current (max. 5 A)

• Low voltage (max. 75 V).

APPLICATIONS

• High-current switching in power applications.

DESCRIPTION

NPN switching transistor in a TO-126; SOT32 plastic

package.

PINNING

DESCRIPTION

1

emitter

2

collector, connected to the metal part of

the mounting surface

3

base

Fig.1

Simplified outline (TO-126; SOT32)

and symbol.

handbook, halfpage

MAM254

12

3

Top view

1

2

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BDX35

−−

100

V

BDX36; BDX37

−−

120

V

VCEO

collector-emitter voltage

open base

BDX35; BDX36

−−

60

V

BDX37

−−

75

V

IC

collector current (DC)

−−

5A

Ptot

total power dissipation

Tmb ≤ 75 °C

−−

15

W

hFE

DC current gain

IC = 0.5 A; VCE =10V

45

−

450

fT

transition frequency

IC = 0.5 A; VCE = 5 V; f = 100 MHz

−

100

−

MHz

toff

turn-off time

ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A −

350

500

ns

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BDX37 Arkusz danych(PDF) 2 Page - NXP Semiconductors

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