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BDX43 Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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BDX43 Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 Jul 02 3 Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BDX42 − 60 V BDX43 − 80 V BDX44 − 90 V VCES collector-emitter voltage VBE =0 BDX42 − 45 V BDX43 − 60 V BDX44 − 80 V VEBO emitter-base voltage open collector − 5V IC collector current (DC) − 1A ICM peak collector current − 2A IB base current (DC) − 100 mA Ptot total power dissipation Tamb ≤ 25 °C − 1.25 W Tmb ≤ 100 °C − 5W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 100 K/W Rth j-mb thermal resistance from junction to mounting base 10 K/W |
Podobny numer części - BDX43 |
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Podobny opis - BDX43 |
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