BF1201 datasheet(9/16 Pages) PHILIPS

Numer części	BF1201

Szczegółowy opis	N-channel dual-gate PoLo MOS-FETs

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Producent	PHILIPS [NXP Semiconductors]

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9 / 16 page

2000 Mar 29

9

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate PoLo MOS-FETs

BF1201; BF1201R;

BF1201WR

handbook, full pagewidth

DUT

C1

4.7 nF

R1

10 k

Ω

MGS315

C4

4.7 nF

L1

≈2.2 µH

C3

4.7 nF

RL

50

Ω

VGG

VAGC

VDS

RGEN

50

Ω

VI

R2

50

Ω

4.7 nF

C2

RG1

Fig.21 Cross-modulation test set-up.

Table 1

Scattering parameters: VDS =5V; VG2-S =4V; ID = 15 mA; Tamb =25 °C

Table 2

Noise data: VDS =5V; VG2-S =4V; ID = 15 mA; Tamb =25 °C

f

(MHz)

s11

s21

s12

s22

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

50

0.987

−4.72

2.775

174.6

0.0006

88.8

0.997

−1.84

100

0.985

−9.39

2.774

169.5

0.0010

86.7

0.997

−3.37

200

0.978

−18.59

2.731

159.1

0.0019

79.7

0.996

−6.72

300

0.976

−27.74

2.671

148.8

0.0026

74.2

0.994

−10.02

400

0.949

−36.59

2.599

138.8

0.0032

69.9

0.992

−13.33

500

0.928

−45.08

2.501

129.1

0.0035

65.9

0.989

−16.55

600

0.905

−53.26

2.400

119.8

0.0035

64.6

0.986

−19.64

700

0.882

−61.07

2.297

110.9

0.0033

65.7

0.982

−22.63

800

0.860

−68.48

2.199

102.4

0.0029

69.1

0.979

−25.54

900

0.838

−75.55

2.096

94.2

0.0024

83.3

0.975

−28.44

1000

0.818

−82.23

1.997

86.3

0.0021

103.8

0.971

−31.42

f

(MHz)

Fmin

(dB)

Γopt

Rn

(

Ω)

(ratio)

(deg)

400

1

0.825

38.93

50

800

1.9

0.753

70.65

38.75

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