2000 Mar 29

3

Philips Semiconductors

Product specification

N-channel dual-gate PoLo MOS-FETs

BF1201; BF1201R;

BF1201WR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

10

V

drain current (DC)

−

30

mA

gate 1 current

−±10

mA

gate 2 current

−±10

mA

total power dissipation

BF1201; BF1201R

−

200

mW

BF1201WR

−

200

mW

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to soldering point

BF1201; BF1201R

185

K/W

BF1201WR

155

K/W

handbook, halfpage

050

(1)

(2)

Ts (°C)

Ptot

(mW)

100

200

250

0

200

150

150

100

50

MCD934

Fig.4 Power derating curve.

(1) BF1201WR.

(2) BF1201 and BF1201R.