BF822W datasheet(2/8 Pages) PHILIPS

Numer części	BF822W

Szczegółowy opis	NPN high-voltage transistors

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Producent	PHILIPS [NXP Semiconductors]

Strona internetowa	http://www.nxp.com

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1997 Sep 03

2

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistors

BF820W; BF822W

FEATURES

• Low current (max. 50 mA)

• High voltage (max. 300 V).

APPLICATIONS

• Telephony and professional communication equipment.

DESCRIPTION

NPN high-voltage transistor in a SOT323 plastic package.

PINNING

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT323) and symbol.

handbook, halfpage

2

3

1

MAM062

3

2

1

Top view

MARKING

TYPE NUMBER

MARKING CODE

BF820W

1Vt

BF822W

1Wt

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BF820W

−

300

V

BF822W

−

250

V

VCEO

collector-emitter voltage

open base

BF820W

−

300

V

BF822W

−

250

V

ICM

peak collector current

−

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

−

200

mW

hFE

DC current gain

IC = 25 mA; VCE =20V

50

−

Cre

feedback capacitance

IC =ic = 0; VCB = 30 V; f = 1 MHz

−

1.6

pF

fT

transition frequency

IC = 10 mA; VCE = 10 V; f = 100 MHz

60

−

MHz

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