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BF869 Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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BF869 Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 12 3 Philips Semiconductors Product specification NPN high-voltage transistors BF869; BF871 THERMAL CHARACTERISTICS CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient 78 K/W Rth j-mb thermal resistance from junction to mounting base 25 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 200 V − 10 nA IE = 0; VCB = 200 V; Tj = 150 °C10 µA IEBO emitter cut-off current IC = 0; VEB =5V − 50 nA hFE DC current gain IC = 25 mA; VCE =20V 50 − VCEsat collector-emitter saturation voltage IC = 30 mA; IB =5mA − 600 mV Cre feedback capacitance IC =ic = 0; VCE = 30 V; f = 1 MHz − 2pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz |
Podobny numer części - BF869 |
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Podobny opis - BF869 |
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