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BF869 Arkusz danych(PDF) 3 Page - NXP Semiconductors

Numer części BF869
Szczegółowy opis  NPN high-voltage transistors
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF869 Arkusz danych(HTML) 3 Page - NXP Semiconductors

  BF869 Datasheet HTML 1Page - NXP Semiconductors BF869 Datasheet HTML 2Page - NXP Semiconductors BF869 Datasheet HTML 3Page - NXP Semiconductors BF869 Datasheet HTML 4Page - NXP Semiconductors BF869 Datasheet HTML 5Page - NXP Semiconductors BF869 Datasheet HTML 6Page - NXP Semiconductors BF869 Datasheet HTML 7Page - NXP Semiconductors BF869 Datasheet HTML 8Page - NXP Semiconductors  
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1999 Apr 12
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF869; BF871
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
78
K/W
Rth j-mb
thermal resistance from junction to mounting base
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 200 V
10
nA
IE = 0; VCB = 200 V; Tj = 150 °C10
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
50
nA
hFE
DC current gain
IC = 25 mA; VCE =20V
50
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB =5mA
600
mV
Cre
feedback capacitance
IC =ic = 0; VCE = 30 V; f = 1 MHz
2pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 60
MHz


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