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BF861 Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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BF861 Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 12 page 1997 Sep 04 2 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios. DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT23 package. PINNING - SOT23 PIN SYMBOL DESCRIPTION 1 s source 2 d drain 3 g gate CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. Marking codes: BF861A: M33. BF861B: M34. BF861C: M35. handbook, halfpage s d g 21 3 MAM036 Top view QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − 25 V IDSS drain current VGS = 0; VDS =8V BF861A 2 6.5 mA BF861B 6 15 mA BF861C 12 25 mA Ptot total power dissipation up to Tamb =25 °C − 250 mW yfs forward transfer admittance VGS = 0; VDS =8V BF861A 12 20 mS BF861B 16 25 mS BF861C 20 30 mS Ciss input capacitance f = 1 MHz − 10 pF Crss reverse transfer capacitance f = 1 MHz − 2.7 pF |
Podobny numer części - BF861 |
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Podobny opis - BF861 |
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