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BF904AR Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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BF904AR Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 16 page 1999 May 14 3 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature of the soldering point of the source lead. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 7V ID drain current − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation Ts ≤ 110 °C; note 1; see Fig.4 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 250 0 200 MGL615 150 150 100 50 Ptot (mW) Ts (°C) |
Podobny numer części - BF904AR |
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Podobny opis - BF904AR |
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