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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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BF908WR Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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BF908WR Arkusz danych(HTML) 2 Page - NXP Semiconductors |
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2 / 7 page  1995 Apr 25 2 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 3g2 gate 2 4g1 gate 1 Fig.1 Simplified outline (SOT343R) and symbol. Marking code: MD. MAM198 Top view 21 34 s,b d g 1 g 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 12 V ID drain current −− 40 mA Ptot total power dissipation −− 300 mW Tj operating junction temperature −− 150 °C yfs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 2.4 3.1 4 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 800 MHz − 1.5 2.5 dB |
Podobny numer części - BF908WR |
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Podobny opis - BF908WR |
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