TPCM8001-H datasheet(3/4 Pages) TOSHIBA

Numer części	TPCM8001-H

Szczegółowy opis	High Speed and High Efficiency DC-DC Converters, Notebook PC Applications, Portable Equipment Applications

Download	4 Pages

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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3 / 4 page

TPCM8001-H

2004-08-18

3

TENTATIVE

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V



±10

µA

Drain cut-OFF current

IDSS

VDS = 30 V, VGS = 0 V



10

µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30



Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

15



V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.1



2.3

V

VGS = 4.5 V, ID = 10 A



10

14

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 10 A



7

9.5

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 10 A

18

36



S

Input capacitance

Ciss



1130



Reverse transfer capacitance

Crss



120



Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz



480



pF

Rise time

tr



2.5



Turn -ON time

ton



9



Fall time

tf



3



Switching time

Turn -OFF time

toff

Duty <

= 1%, tw = 10 µs



19



ns

VDD

∼− 24 V, VGS = 10 V, ID = 20 A



19



Total gate charge

(gate-source plus gate-drain)

Qg

VDD

∼− 24 V, VGS = 5 V, ID = 20 A



11



Gate-source charge 1

Qgs1



3.9



Gate-drain (“miller”) charge

Qgd



4.0



Gate switch charge

QSW

VDD

∼− 24 V, VGS = 10 V, ID = 20 A



6.0



nC

Source-Drain Ratings and Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP



60

A

Forward voltage (diode)

VDSF

IDR = 20 A, VGS = 0 V



−1.2

V

VDD ∼

− 15 V

0 V

VGS

10 V

ID = 10A

VOUT

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