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74AUP1G332GW Arkusz danych(PDF) 5 Page - NXP Semiconductors

Numer części 74AUP1G332GW
Szczegółowy opis  Low-power 3-input OR gate
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AUP1G332GW Arkusz danych(HTML) 5 Page - NXP Semiconductors

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74AUP1G332_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01.00 — 27 February 2006
5 of 18
Philips Semiconductors
74AUP1G332
Low-power 3-input OR gate
9.
Limiting values
[1]
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are
observed.
[2]
For SC-88 packages: above 87.5
°C the value of P
tot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45
°C the value of P
tot derates linearly with 2.4 mW/K.
10. Recommended operating conditions
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+4.6
V
IIK
input clamping
current
VI <0V
-
−50
mA
VI
input voltage
[1]
−0.5
+4.6
V
IOK
output clamping
current
VO <0V
-
−50
mA
VO
output voltage
active mode and
Power-down mode
[1]
−0.5
+4.6
V
IO
output current
VO =0 VtoVCC
-
±20
mA
ICC
quiescent supply
current
-
+50
mA
IGND
ground current
-
−50
mA
Tstg
storage temperature
−65
+150
°C
Ptot
total power
dissipation
Tamb = −40 °C to +125 °C
[2] -
250
mW
Table 7:
Recommended operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.8
3.6
V
VI
input voltage
0
3.6
V
VO
output voltage
active mode
0
VCC
V
Power-down mode; VCC = 0 V
0
3.6
V
Tamb
ambient temperature
−40
+125
°C
∆t/∆V
input transition rise and
fall rate
VCC = 0.8 V to 3.6 V
0
200
ns/V


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