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IRF710A Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
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IRF710A Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page IRF710A 10 -1 10 0 10 1 10 -2 10 -1 10 0 @ Notes : 1. 250 µs Pulse Test 2. T C = 25 oC V GS Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5V 5.0 V Bottom : 4.5V V DS , Drain-Source Voltage [V] 24 68 10 10 -2 10 -1 10 0 25 oC 150 oC - 55 oC @ Notes : 1. V GS = 0 V 2. V DS = 50 V 3. 250 µs Pulse Test V GS , Gate-Source Voltage [V] 0123 456 0 2 4 6 8 @ Note : T J = 25 oC V GS = 20 V V GS = 10 V I D , Drain Current [A] 0.20.40.60.81.01.2 10 -2 10 -1 10 0 150 oC 25 oC @ Notes : 1. V GS = 0 V 2. 250 µsPulse Test V SD , Source-Drain Voltage [V] 10 0 10 1 0 100 200 300 400 C iss= Cgs+ Cgd ( Cds= shorted ) C oss = C ds + C gd C rss = C gd @ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS , Drain-Source Voltage [V] 024 68 10 0 5 10 V DS = 320 V V DS = 200 V V DS = 80 V @ Notes : I D = 2.0 A Q G , Total Gate Charge [nC] 1&+$11(/ 32:(5 026)(7 Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current |
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